Silicon Ubushyuhe bwa Oxide Wafer

Ibisobanuro bigufi:

Semicera Energy Technology Co., Ltd nisoko ritanga isoko ryinzobere mugukoresha wafer kandi igezweho. Twiyemeje gutanga ibicuruzwa byiza-byizewe, byizewe, kandi bishya mubikorwa bya semiconductor, inganda zifotora nizindi nzego zijyanye nayo.

Umurongo wibicuruzwa byacu birimo SiC / TaC wasize ibicuruzwa bya grafite nibicuruzwa bya ceramic, bikubiyemo ibikoresho bitandukanye nka karubide ya silicon, nitride ya silicon, na oxyde ya aluminium nibindi nibindi.

Kugeza ubu, nitwe twenyine dukora uruganda rutanga isuku 99,9999% ya SiC hamwe na 99.9% byongeye gushyirwaho karbide ya silicon. Uburebure bwa SiC ntarengwa dushobora gukora 2640mm.

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Ibicuruzwa birambuye

Ibicuruzwa

Ubushyuhe bwa oxyde ya salifike ya silicon ni urwego rwa oxyde cyangwa silika igizwe hejuru yubusa bwa wafer ya silicon mugihe cyubushyuhe bwinshi hamwe na oxyde oxyde.Ubushuhe bwa oxyde oxyde ya silicon wafer ikunze guhingwa mu itanura rya horizontal, kandi ubushyuhe bwo gukura muri rusange ni 900 ° C ~ 1200 ° C, kandi hariho uburyo bubiri bwo gukura bwa "okiside itose" na "okiside yumye". Ubushuhe bwa oxyde oxyde ni "gukura" oxyde ya oxyde ifite ubutinganyi bwinshi nimbaraga za dielectric kurusha CVD yabitsemo oxyde. Ubushyuhe bwa okiside yumuriro nigice cyiza cya dielectric nka insulator. Mubikoresho byinshi bishingiye kuri silikoni, ubushyuhe bwa oxyde oxyde ifite uruhare runini nka doping ikingira hamwe na dielectric.

Inama: Ubwoko bwa Oxidation

1. Okiside yumye

Silicon ikora na ogisijeni, hanyuma oxyde igenda yerekeza kumurongo wibanze. Okiside yumye igomba gukorwa ku bushyuhe bwa 850 kugeza 1200 ° C, kandi umuvuduko wubwiyongere ukaba muke, ushobora gukoreshwa mugukura kwa MOS. Iyo ubuziranenge bwo hejuru, ultra-thin silicon oxyde ikenewe, okiside yumye ihitamo kuruta okiside itose.

Ubushobozi bwa okiside yumye: 15nm ~ 300nm (150A ~ 3000A)

2. Okiside itose

Ubu buryo bukoresha imvange ya hydrogène hamwe na ogisijeni ifite isuku nyinshi kugirango yaka kuri ~ 1000 ° C, bityo ikabyara umwuka wamazi kugirango ube urwego rwa oxyde. Nubwo okiside itose idashobora kubyara urwego rwohejuru rwa okiside yumye nka okiside yumye, ariko birahagije gukoreshwa nkahantu hitaruye, ugereranije na okiside yumye ifite inyungu igaragara nuko ifite umuvuduko mwinshi wo gukura.

Ubushobozi bwa okiside itose: 50nm ~ 15µm (500A ~ 15µm)

3. Uburyo bwumye - uburyo butose - uburyo bwumye

Muri ubu buryo, umwuka wa ogisijeni wumye urekurwa mu itanura rya okiside mu cyiciro cya mbere, hydrogène yongerwaho hagati ya okiside, kandi hydrogène ibikwa amaherezo kugira ngo ikomeze okiside hamwe na ogisijeni yumye yumye kugira ngo habeho imiterere ya okiside yuzuye kuruta uburyo busanzwe bwa okiside itose muburyo bwamazi.

4. Okiside ya TEOS

Uburyo bwa Oxidation 氧化工艺	Okiside itose cyangwa okiside yumye 湿法氧化 / 干法氧化
Diameter 硅片直径	2 ″ / 3 ″ / 4 ″ / 6 ″ / 8 ″ / 12 ″ 英寸
Ubunini bwa Oxide 氧化层厚度	100 Å ~ 15µm 10nm ~ 15µm
Ubworoherane 公差范围	+/- 5%
Ubuso 表面	Oxidation Yuruhande rumwe (SSO) / Oxidation Yimpande ebyiri (DSO) 单面氧化/双面氧化
Itanura 氧化炉类型	Itanura rya horizontal 水平管式炉
Gazi 气体类型	Hydrogen na gaze ya Oxygene 氢氧混合气体
Ubushyuhe 氧化温度	900 ℃ ~ 1200 ℃ 900 ~ 1200摄氏度
Ironderero 折射率	1.456