Ubushyuhe bwa oxyde ya salifike ya silicon ni urwego rwa oxyde cyangwa silika igizwe hejuru yubusa bwa wafer ya silicon mugihe cyubushyuhe bwinshi hamwe na oxyde oxyde.Ubushuhe bwa oxyde oxyde ya silicon wafer ikunze guhingwa mu itanura rya horizontal, kandi ubushyuhe bwo gukura muri rusange ni 900 ° C ~ 1200 ° C, kandi hariho uburyo bubiri bwo gukura bwa "okiside itose" na "okiside yumye".Ubushuhe bwa oxyde oxyde ni "gukura" oxyde ya oxyde ifite ubutinganyi bwinshi nimbaraga za dielectric kurusha CVD yabitsemo oxyde.Ubushyuhe bwa okiside yumuriro nigice cyiza cya dielectric nka insulator.Mubikoresho byinshi bishingiye kuri silikoni, ubushyuhe bwa oxyde oxyde ifite uruhare runini nka doping ikingira hamwe na dielectric.
Inama: Ubwoko bwa Oxidation
1. Okiside yumye
Silicon ikora na ogisijeni, hanyuma oxyde igenda yerekeza kumurongo wibanze.Okiside yumye igomba gukorwa ku bushyuhe bwa 850 kugeza 1200 ° C, kandi umuvuduko wubwiyongere ukaba muke, ushobora gukoreshwa mugukura kwa MOS.Iyo ubuziranenge bwo hejuru, ultra-thin silicon oxyde ikenewe, okiside yumye ihitamo kuruta okiside itose.
Ubushobozi bwa okiside yumye: 15nm ~ 300nm (150A ~ 3000A)
2. Okiside itose
Ubu buryo bukoresha imvange ya hydrogène hamwe na ogisijeni ifite isuku nyinshi kugirango yaka kuri ~ 1000 ° C, bityo ikabyara umwuka wamazi kugirango ube urwego rwa oxyde.Nubwo okiside itose idashobora kubyara urwego rwohejuru rwa okiside yumye nka okiside yumye, ariko birahagije gukoreshwa nkahantu hitaruye, ugereranije na okiside yumye ifite inyungu igaragara nuko ifite umuvuduko mwinshi wo gukura.
Ubushobozi bwa okiside itose: 50nm ~ 15µm (500A ~ 15µm)
3. Uburyo bwumye - uburyo butose - uburyo bwumye
Muri ubu buryo, umwuka wa ogisijeni wumye urekurwa mu itanura rya okiside mu cyiciro cya mbere, hydrogène yongerwaho hagati ya okiside, kandi hydrogène ibikwa amaherezo kugira ngo ikomeze okiside hamwe na ogisijeni yumye yumye kugira ngo habeho imiterere ya okiside yuzuye kuruta uburyo busanzwe bwa okiside itose muburyo bwamazi.
4. Okiside ya TEOS
| Uburyo bwa Oxidation | Okiside itose cyangwa okiside yumye |
| Diameter | 2 ″ / 3 ″ / 4 ″ / 6 ″ / 8 ″ / 12 ″ |
| Ubunini bwa Oxide | 100 Å ~ 15µm |
| Ubworoherane | +/- 5% |
| Ubuso | Oxidation Yuruhande rumwe (SSO) / Oxidation Yimpande ebyiri (DSO) |
| Itanura | Itanura rya horizontal |
| Gazi | Hydrogen na gaze ya Oxygene |
| Ubushyuhe | 900 ℃ ~ 1200 ℃ |
| Ironderero | 1.456 |
