Gallium Nitride Substrates | GaN Wafers

Ibisobanuro bigufi:

Nitride ya Gallium (GaN), nkibikoresho bya silicon karbide (SiC), ni iyisekuru rya gatatu ryibikoresho bya semiconductor bifite ubugari bwagutse bwagutse, hamwe nubugari bunini bwikigero kinini, ubwinshi bwumuriro mwinshi, umuvuduko mwinshi wimuka wa elegitoronike, hamwe n’umuriro w'amashanyarazi wangiritse cyane ibiranga.Ibikoresho bya GaN bifite ibyerekezo byinshi byokoreshwa muburyo bwihuse, umuvuduko mwinshi hamwe nimbaraga zikenerwa cyane nka LED yo kuzigama ingufu za LED, kwerekana laser projection, ibinyabiziga bishya byingufu, gride yubwenge, itumanaho rya 5G.

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Ibicuruzwa birambuye

Ibicuruzwa

Igisekuru cya gatatu ibikoresho bya semiconductor birimo cyane cyane SiC, GaN, diyama, nibindi, kubera ko ubugari bwacyo bwagutse (Eg) burenze cyangwa bungana na volt ya electron ya 2.3 (eV), izwi kandi nkibikoresho bigari bya semiconductor. Ugereranije n’ibikoresho bya semiconductor yo mu gisekuru cya mbere n’icya kabiri, ibikoresho bya semiconductor yo mu gisekuru cya gatatu bifite ibyiza byo gutwara amashanyarazi menshi, umurima w'amashanyarazi ucika cyane, umuvuduko mwinshi wimuka wa elegitoronike hamwe ningufu nyinshi zihuza, zishobora kuzuza ibisabwa bishya byikoranabuhanga rya kijyambere rya kijyambere kuri byinshi ubushyuhe, imbaraga nyinshi, umuvuduko mwinshi, inshuro nyinshi hamwe no kurwanya imirasire nibindi bihe bibi. Ifite ibyifuzo byingenzi byokurikizwa mubijyanye no kurinda igihugu, indege, ikirere, ubushakashatsi bwa peteroli, kubika optique, nibindi, kandi birashobora kugabanya igihombo cyingufu zirenga 50% mubikorwa byinshi byingenzi nkitumanaho ryagutse, ingufu zizuba, inganda zikora imodoka, itara rya semiconductor, hamwe na gride yubwenge, kandi irashobora kugabanya ingano yibikoresho hejuru ya 75%, ibyo bikaba bifite akamaro kanini mugutezimbere ubumenyi bwikoranabuhanga.

Ingingo 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Diameter 晶圆直径	50.8 ± 1 mm
Umubyimba厚度	350 ± 25 mm
Icyerekezo 晶向	Indege ya C (0001) ihanamye yerekeza kuri M-axis 0.35 ± 0.15 °
Flat 主定位边	(1-100) 0 ± 0.5 °, 16 ± 1 mm
Icyiciro cya kabiri 次定位边	(11-20) 0 ± 3 °, 8 ± 1 mm
Imyitwarire 导电性	N-ubwoko	N-ubwoko	Igice cya kabiri
Kurwanya (300K) 电阻率	<0.1 Ω · cm	<0.05 Ω · cm	> 106 Ω · cm
TTV 平整度	≤ 15 mm
BOW 弯曲度	≤ 20 mm
Ga Isura Ubuso Buke Ga面粗糙度	<0.2 nm (isize);
	cyangwa <0.3 nm (kuvura neza no kuvura hejuru ya epitaxy)
N Isura Yubusa N面粗糙度	0.5 ~ 1.5 mm
	amahitamo: 1 ~ 3 nm (ubutaka bwiza); <0.2 nm (isize)
Ubucucike 位错密度	Kuva kuri 1 x 105 kugeza 3 x 106 cm-2 (ubarwa na CL) *
Ubucucike bwa Macro 缺陷密度	<2 cm-2
Agace gakoreshwa 有效面积	> 90% (inkombe na macro inenge yo guhezwa)
Irashobora guhindurwa ukurikije ibyifuzo byabakiriya, imiterere itandukanye ya silicon, safiro, SiC ishingiye kuri GaN epitaxial urupapuro.