Ibisobanuro
Abatwara Waferhamwe naSilicon Carbide (SiC)kuva muri semicera byateguwe neza kubikorwa byo hejuru epitaxial gukura, byemeza ibisubizo byiza muriSi EpitaxynaSiC EpitaxyPorogaramu. Abatwara Semicera itunganijwe neza yubatswe kugirango bahangane n’ibihe bikabije, ibe ibintu byingenzi muri sisitemu ya Susceptor ya MOCVD yinganda zisaba ubunyangamugayo kandi burambye.
Abatwara wafer baratandukanye, bashyigikira inzira zikomeye hamwe nibikoresho nkaPSS Gutwara, Ikarita ya ICP, naRTP. Ibikoresho byabo bikomeye bya SiC byongera imikorere kubikorwa nkaLED EpitaxialSusceptor na Monocrystalline Silicon, itanga ibisubizo bihamye no mubidukikije bisaba.
Biboneka muburyo bwinshi, nka Barrel Susceptor na Pancake Susceptor, aba batwara ibintu bafite uruhare runini mugukora amafoto yifotora na semiconductor, gushyigikira umusaruro wa Photovoltaic no korohereza GaN kubikorwa bya Epitaxy ya SiC. Hamwe nigishushanyo cyiza cyabo, abatwara ibintu numutungo wingenzi kubakora bagamije kubyara umusaruro ushimishije.
Ibyingenzi
1 .Ubuziranenge bwera SiC yashushanyije grafite
2. Kurwanya ubushyuhe burenze & uburinganire bwumuriro
3. NibyizaSiC ya kirisitiKuri Ubuso
4. Kuramba cyane kurwanya isuku yimiti
Ibyingenzi byingenzi bya CVD-SIC Coatings:
SiC-CVD | ||
Ubucucike | (g / cc) | 3.21 |
Imbaraga zoroshye | (Mpa) | 470 |
Kwiyongera k'ubushyuhe | (10-6 / K) | 4 |
Amashanyarazi | (W / mK) | 300 |
Gupakira no kohereza
Ubushobozi bwo gutanga:
10000 Igice / Ibice buri kwezi
Gupakira & Gutanga:
Gupakira: Bisanzwe & Gupakira bikomeye
Umufuka wuzuye + Agasanduku + Ikarito + Pallet
Icyambu:
Ningbo / Shenzhen / Shanghai
Igihe cyo kuyobora:
Umubare (Ibice) | 1-1000 | > 1000 |
Est. Igihe (iminsi) | 30 | Kuganira |